• DocumentCode
    1353713
  • Title

    Resistive Switching Properties of \\hbox {Au}/ \\hbox {ZrO}_{2}/\\hbox {Ag} Structure for Low-Voltage Nonvolatile Memory Applications

  • Author

    Li, Yingtao ; Long, Shibing ; Zhang, Manhong ; Liu, Qi ; Shao, Lubing ; Zhang, Sen ; Wang, Yan ; Zuo, Qingyun ; Liu, Su ; Liu, Ming

  • Author_Institution
    Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Chinese Acad. of Sci., Beijing, China
  • Volume
    31
  • Issue
    2
  • fYear
    2010
  • Firstpage
    117
  • Lastpage
    119
  • Abstract
    The reliable resistive switching properties of Au/ZrO2/ Ag structure fabricated with full room temperature process are demonstrated in this letter. The tested devices show low operation voltages (< 1 V), high resistance ratio (about 104), fast switching speed (50 ns), and reliable data retention (ten years extrapolation at both RT and 85 ??C). Moreover, the benefits of high yield and multilevel storage possibility make them promising in the next generation nonvolatile memory applications.
  • Keywords
    gold; low-power electronics; random-access storage; zirconium compounds; Au-ZrO2-Ag; low-voltage nonvolatile memory; resistance random access memory; resistive switching property; $hbox{ZrO}_{2}$; Nonvolatile memory; resistance random access memory (RRAM); resistive switching;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2036276
  • Filename
    5352234
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1353713