DocumentCode :
1353806
Title :
A 16-Bit 100 to 160 MS/s SiGe BiCMOS Pipelined ADC With 100 dBFS SFDR
Author :
Payne, Robert ; Corsi, Marco ; Smith, David ; Hsieh, Tien-Ling ; Kaylor, Scott
Author_Institution :
High Performance Analog Div., Texas Instrum. (TI) Inc., Dallas, TX, USA
Volume :
45
Issue :
12
fYear :
2010
Firstpage :
2613
Lastpage :
2622
Abstract :
This paper describes a 16-bit analog-to-digital converter designed in a complementary SiGe BiCMOS SOI process. The high-performance complementary BJTs lead to a switched-current approach to the signal processing. Although it uses a fairly traditional four-stage pipeline architecture, several techniques are incorporated to achieve 16 bits of distortion performance at a sample rate of up to 160 MHz. For improved high input frequency linearity we describe a track and hold with a sampling instant modulation scheme. For stability of the current-mode DAC over signal swing and temperature we describe a scheme to increase the output impedance of the first sub-DAC. At a sample clock frequency of 122 MHz, prototype silicon exhibits a spurious-free dynamic range of 100 dBc through the first two Nyquist zones and a signal-to noise ratio of 77 dB. With a 160 MHz sampling clock, the measured SFDR is better than 90 dBc and the SNR is better than 74.5 dB. The ADC dissipates 1.6 W from 5 V and 3.3 V supplies.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; analogue-digital conversion; bipolar transistors; clocks; modulation; pipeline processing; semiconductor materials; silicon-on-insulator; BJT; BiCMOS SOI process; BiCMOS pipelined ADC; Nyquist zone; SFDR; SiGe; analog-to-digital converter; clock frequency; current-mode DAC; four-stage pipeline architecture; frequency 160 MHz; power 1.6 W; sampling clock; sampling instant modulation; signal processing; signal swing; signal to noise ratio; spurious-free dynamic range; switched-current approach; voltage 3.3 V; voltage 5 V; word length 16 bit; Analog-digital conversion; BiCMOS integrated circuits; Linearization techniques; Silicon germanium; Silicon on insulator technology; Switches; Transistors; ADC; SOI; SiGe; analog-to-digital; complementary bipolar; converter; current mode; linearization; pipeline; track-and-hold;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2010.2074650
Filename :
5604661
Link To Document :
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