DocumentCode
1354181
Title
A magnetic-amplifier ?? Silicon-transistor power supply for missile application
Author
Mokrytzki, B. ; Stuart, R. A.
Author_Institution
Westinghouse Electric Corporation, Pittsburgh, Pa.
Volume
78
Issue
6
fYear
1960
Firstpage
835
Lastpage
843
Abstract
The recent development of the first truly high-power silicon transistor and the demand for high-efficiency, regulated, solid-state power supplies have stimulated interest in silicon-transistor-magnetic-amplifier combinations. Apart from the usual ability of silicon devices to survive a higher temperature than their germanium counterparts, the new transistors, due to the high-voltage ratings and low internal losses, can control considerably more power than contemporary silicon units. These devices have proved to be extremely rugged and are virtually comparable with magnetic amplifiers in that respect. Thus, to all the advantages which have already been attributed to transistor-inverter-high-frequency magnetic-amplifier systems, it is now possible to attach the valuable qualities of silicon power transistors.
Keywords
Inverters; Magnetic circuits; Magnetic cores; Magnetic separation; Saturation magnetization; Voltage control; Windings;
fLanguage
English
Journal_Title
American Institute of Electrical Engineers, Part I: Communication and Electronics, Transactions of the
Publisher
ieee
ISSN
0097-2452
Type
jour
DOI
10.1109/TCE.1960.6368478
Filename
6368478
Link To Document