• DocumentCode
    1354181
  • Title

    A magnetic-amplifier ?? Silicon-transistor power supply for missile application

  • Author

    Mokrytzki, B. ; Stuart, R. A.

  • Author_Institution
    Westinghouse Electric Corporation, Pittsburgh, Pa.
  • Volume
    78
  • Issue
    6
  • fYear
    1960
  • Firstpage
    835
  • Lastpage
    843
  • Abstract
    The recent development of the first truly high-power silicon transistor and the demand for high-efficiency, regulated, solid-state power supplies have stimulated interest in silicon-transistor-magnetic-amplifier combinations. Apart from the usual ability of silicon devices to survive a higher temperature than their germanium counterparts, the new transistors, due to the high-voltage ratings and low internal losses, can control considerably more power than contemporary silicon units. These devices have proved to be extremely rugged and are virtually comparable with magnetic amplifiers in that respect. Thus, to all the advantages which have already been attributed to transistor-inverter-high-frequency magnetic-amplifier systems, it is now possible to attach the valuable qualities of silicon power transistors.
  • Keywords
    Inverters; Magnetic circuits; Magnetic cores; Magnetic separation; Saturation magnetization; Voltage control; Windings;
  • fLanguage
    English
  • Journal_Title
    American Institute of Electrical Engineers, Part I: Communication and Electronics, Transactions of the
  • Publisher
    ieee
  • ISSN
    0097-2452
  • Type

    jour

  • DOI
    10.1109/TCE.1960.6368478
  • Filename
    6368478