Title :
Characterization and Modeling of Parasitic Field-Oxide Transistors for Use in Radiation Hardening by Design
Author :
Schlenvogt, Garrett J. ; Barnaby, Hugh J. ; Rollins, Jeff D. ; Wilkinson, Jeff ; Morrison, Scott ; Tyler, Larry
Author_Institution :
Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
Parasitic field oxide transistors are affected by ionizing radiation, becoming active circuit elements leading to loss of device isolation. Test structures are designed, fabricated and characterized allowing analysis of parasitic device layout geometries. Accurate modeling of parasitic devices through determination of effective width/length ratios supports compact model development for use in radiation-hardening-by-design activities.
Keywords :
field effect transistors; oxidation; radiation hardening (electronics); semiconductor device models; active circuit elements; compact model development; device isolation loss; effective width-length ratio determination; ionizing radiation; parasitic device layout geometry analysis; parasitic device modeling; parasitic field-oxide transistor modeling; radiation-hardening-by-design activities; Integrated circuit modeling; Leakage current; Logic gates; MOSFET circuits; Radiation effects; Radiation hardening; Transistors; Interdevice leakage; local oxidation of silicon (LOCOS); oxide trapped charge; radiation; total ionizing dose (TID);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2169427
