Title :
Structure for improving the characteristics of high resistivity polycrystalline resistors [in CMOS]
Author :
Chen, Chung-Hui ; Fang, Yean-Kuen ; Wang, Ta-Wei ; Hsu, Yung-Lung ; Hsu, Shun-Liang
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
6/22/2000 12:00:00 AM
Abstract :
A novel polysilicon resistor structure which employs a thin field oxide layer under the contact to sink the lateral arsenic dose, has been developed to improve the characteristics of conventional high resistivity phosphorus-doped polycrystalline silicon resistors. Improvements in the variation of sheet resistance with draw length, the voltage coefficient of resistance (VCR) and the temperature coefficient of resistance (TCR) have been confirmed by empirical data
Keywords :
CMOS integrated circuits; electric resistance; elemental semiconductors; resistors; semiconductor thin films; silicon; Si:P,As; draw length; high resistivity polycrystalline resistors; sheet resistance; temperature coefficient of resistance; thin field oxide layer; voltage coefficient of resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000801
