Title :
Diode lasers emitting near 3.44 μm in continuous-wave regime at 300K
Author :
Hosoda, T. ; Kipshidze, G. ; Shterengas, L. ; Belenky, G.
Author_Institution :
State Univ. of New York at Stony Brook, Stony Brook, NY, USA
fDate :
10/1/2010 12:00:00 AM
Abstract :
A continuous-wave, room temperature operation of type-I quantum well diode lasers was extended above 3.4 μm. The laser heterostructure, optimised for minimum threshold carrier concentration, was pseudomorphically grown by solid source molecular beam epitaxy on GaSb. Multimode lasers generate 29 mW of output power at 17°C.
Keywords :
molecular beam epitaxial growth; semiconductor lasers; continuous-wave regime; laser heterostructure; minimum threshold carrier concentration; multimode lasers; pseudomorphically grown; solid source molecular beam epitaxy; temperature 293 K to 298 K; temperature 300 K; type-I quantum well diode lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.2564
