Title :
Improvement of the tunnel oxide quality by a low thermal budget dual oxidation for flash memories
Author :
Kim, Jonghan ; Ahn, Sung Tae
Author_Institution :
Memory Div., Samsung Electron. Co. Ltd., Kyungki, South Korea
Abstract :
The high-quality ultrathin tunnel oxide using a low thermal budget dual oxidation has been developed. Due mainly to the reduction of imperfect chemical bonds and interface roughness, the tunnel and gate oxide quality in the fabrication of flash memory such as stress-induced leakage current (SILC), effective electron mobility, and cycling endurance characteristics, were improved compared to the pure dry oxides.
Keywords :
EPROM; MOS memory circuits; integrated circuit technology; oxidation; tunnelling; chemical bonding; cycling endurance; dry oxide; dual oxidation; electron mobility; fabrication; flash memory; gate oxide; interface roughness; stress-induced leakage current; thermal budget; ultrathin tunnel oxide; Annealing; Current density; Electron mobility; Electron traps; Flash memory; Leakage current; Nonvolatile memory; Oxidation; Stress; Temperature;
Journal_Title :
Electron Device Letters, IEEE
