• DocumentCode
    1354699
  • Title

    Improvement of the tunnel oxide quality by a low thermal budget dual oxidation for flash memories

  • Author

    Kim, Jonghan ; Ahn, Sung Tae

  • Author_Institution
    Memory Div., Samsung Electron. Co. Ltd., Kyungki, South Korea
  • Volume
    18
  • Issue
    8
  • fYear
    1997
  • Firstpage
    385
  • Lastpage
    387
  • Abstract
    The high-quality ultrathin tunnel oxide using a low thermal budget dual oxidation has been developed. Due mainly to the reduction of imperfect chemical bonds and interface roughness, the tunnel and gate oxide quality in the fabrication of flash memory such as stress-induced leakage current (SILC), effective electron mobility, and cycling endurance characteristics, were improved compared to the pure dry oxides.
  • Keywords
    EPROM; MOS memory circuits; integrated circuit technology; oxidation; tunnelling; chemical bonding; cycling endurance; dry oxide; dual oxidation; electron mobility; fabrication; flash memory; gate oxide; interface roughness; stress-induced leakage current; thermal budget; ultrathin tunnel oxide; Annealing; Current density; Electron mobility; Electron traps; Flash memory; Leakage current; Nonvolatile memory; Oxidation; Stress; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.605447
  • Filename
    605447
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1354699