Title :
Electromigration-induced failure of GaN multi-quantum well light emitting diode
Author :
Kim, Hyunsoo ; Yang, Hyundoek ; Huh, Chul ; Kim, Sang-Woo ; Park, Seong-Ju ; Hwang, Hyunsang
Author_Institution :
Dept. of Mater. Sci. & Eng., Kwangju Inst. of Sci. & Technol., South Korea
fDate :
5/11/2000 12:00:00 AM
Abstract :
The reliability characteristics of a multi-quantum well (MQW) GaN-InGaN light emitting diode (LED) under various stress current densities have been investigated. Based on the contact electromigration failure model of a silicon device, the lifetime of the LED device under normal operating current condition can be obtained from the relation t f=C/I*
Keywords :
III-V semiconductors; current density; electromigration; failure analysis; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor device reliability; semiconductor quantum wells; wide band gap semiconductors; GaN MQW LED; GaN-InGaN; GaN/InGaN LED; LED device lifetime; MQW light emitting diode; contact electromigration failure model; electromigration-induced failure; multi-quantum well LED; reliability characteristics; stress current densities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000657
