Title :
Turn-off performance evaluations of trench-gate IGBT under soft switching
Author :
Iwamoto, H. ; Kawakami, A. ; Kondo, H. ; Nakaoka, M.
Author_Institution :
Power Semicond. Devices Div., Mitsubishi Electr. Corp., Fukuoka, Japan
fDate :
5/11/2000 12:00:00 AM
Abstract :
Turn-off performance evaluations of trench-gate insulated gate bipolar transistors (IGBTs) under a zero voltage soft switching commutation scheme are presented. It is noted that the developed trench-gate IGBT has lower turn-off power losses due to soft switching in addition to having a low conduction loss
Keywords :
insulated gate bipolar transistors; conduction loss; trench-gate insulated gate bipolar transistor; turn-off power loss; zero voltage soft switching commutation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000679
