DocumentCode
1354766
Title
Characteristics of the Fluorinated High-
Inter-Poly Dielectrics
Author
Hsieh, Chih-Ren ; Chen, Yung-Yu ; Lu, Kwung-Wen ; Lin, Gray ; Lou, Jen-Chung
Author_Institution
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Volume
31
Issue
12
fYear
2010
Firstpage
1446
Lastpage
1448
Abstract
In this letter, the reliabilities and insulating characteristics of the fluorinated aluminum oxide (Al2O3) and hafnium oxide (HfO2) inter-poly dielectric (IPD) are studied for the first time. Compared with the IPDs without fluorine incorporation, the results clearly indicate that fluorine incorporation process is effective to improve the insulating characteristics of both the Al2O3 and HfO2 IPDs, mainly ascribed to the trap density reduction and the smooth interface. Although HfO2 possesses higher dielectric constant to increase the gate coupling ratio, the results apparently indicate that the fluorine incorporation process is more effective to improve the dielectric characteristics of the Al2 O3 IPD than the HfO2 IPD.
Keywords
aluminium compounds; hafnium compounds; high-k dielectric thin films; Al2O3; HfO2; dielectric characteristics; fluorinated aluminum oxide; fluorinated high-k inter-poly dielectrics; fluorine incorporation process; hafnium oxide; insulating characteristics; smooth interface; trap density reduction; Aluminum oxide; Dielectrics; High K dielectric materials; Leakage current; Logic gates; $hbox{Al}_{2}hbox{O}_{3}$ ; $hbox{HfO}_{2}$ ; fluorine;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2074181
Filename
5605221
Link To Document