• DocumentCode
    1354766
  • Title

    Characteristics of the Fluorinated High- k Inter-Poly Dielectrics

  • Author

    Hsieh, Chih-Ren ; Chen, Yung-Yu ; Lu, Kwung-Wen ; Lin, Gray ; Lou, Jen-Chung

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • Volume
    31
  • Issue
    12
  • fYear
    2010
  • Firstpage
    1446
  • Lastpage
    1448
  • Abstract
    In this letter, the reliabilities and insulating characteristics of the fluorinated aluminum oxide (Al2O3) and hafnium oxide (HfO2) inter-poly dielectric (IPD) are studied for the first time. Compared with the IPDs without fluorine incorporation, the results clearly indicate that fluorine incorporation process is effective to improve the insulating characteristics of both the Al2O3 and HfO2 IPDs, mainly ascribed to the trap density reduction and the smooth interface. Although HfO2 possesses higher dielectric constant to increase the gate coupling ratio, the results apparently indicate that the fluorine incorporation process is more effective to improve the dielectric characteristics of the Al2 O3 IPD than the HfO2 IPD.
  • Keywords
    aluminium compounds; hafnium compounds; high-k dielectric thin films; Al2O3; HfO2; dielectric characteristics; fluorinated aluminum oxide; fluorinated high-k inter-poly dielectrics; fluorine incorporation process; hafnium oxide; insulating characteristics; smooth interface; trap density reduction; Aluminum oxide; Dielectrics; High K dielectric materials; Leakage current; Logic gates; $hbox{Al}_{2}hbox{O}_{3}$; $hbox{HfO}_{2}$; fluorine;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2074181
  • Filename
    5605221