DocumentCode :
1354786
Title :
CMOS-compatible organic light-emitting diodes
Author :
Heinrich, Lutz M H ; Müller, Jochen ; Hilleringmann, Ulrich ; Goser, Karl F. ; Holmes, Andrew ; Hwang, Do-Hoon ; Stern, R.
Author_Institution :
Dortmund Univ., Germany
Volume :
44
Issue :
8
fYear :
1997
fDate :
8/1/1997 12:00:00 AM
Firstpage :
1249
Lastpage :
1252
Abstract :
We report a new method for the integration of light-emitting devices on a silicon substrate. As an active layer, we use unsubstituted PPV or PPV-based organic macromolecules with a p+-silicon anode and a cathode made from aluminum or titanium. The polymer is deposited by spin-coating the precursor, followed by a thermal conversion step to form the macromolecules. All process steps, including the possibility of dry etching of the active layer and the upper electrode, are typical for MOS technology. Spectrum analysis, current-voltage, and intensity measurements have been carried out for device characterization. These organic light-emitting diodes allow the monolithic integration of microelectronic circuits and light-emitting devices on one silicon chip applying only typical MOS process steps
Keywords :
CMOS integrated circuits; integrated circuit technology; light emitting diodes; polymer films; silicon; Al; Al cathode; CMOS-compatible organic LEDs; MOS technology; PPV-based organic macromolecules; Si; Si substrate; Ti; Ti cathode; device characterization; dry etching; monolithic integration; organic light-emitting diodes; p+-Si anode; spin-coating; thermal conversion step; unsubstituted PPV; Aluminum; Anodes; Cathodes; Current measurement; Dry etching; Electrodes; Organic light emitting diodes; Polymers; Silicon; Titanium;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.605463
Filename :
605463
Link To Document :
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