$\hbox {Al}_{2}\hbox {O}_{3}$ -Based RRAM Using Atomic Layer Deposition (ALD) With 1- $\mu\hbox {A}$

Al₂O₃-based RRAM devices were fabricated using atomic layer deposition under 100°C and 300°C deposition temperatures, respectively, and their resistance-switching behaviors were investigated. Both devices show unipolar switching if the top electrode (TE) is made of Ti/Al, whereas the bipolar phenomenon is observed when TE is pure aluminum. Devices fabricated at higher temperature give better uniformity and higher resistance ratio. Ultralow RESET current (~1 μA) was obtained, together with adequate voltage margin.