All-Optical Cross-Phase Modulation Generation by Ion Implantation in III–V Quantum Wells

Author

Cong, Guangwei ; Akimoto, Ryoichi ; Gozu, Shinichirou ; Mozume, Teruo ; Hasama, Toshifumi ; Ishikawa, Hiroshi

Author_Institution

Network Photonics Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan

Volume

22

Issue

24

fYear

2010

Firstpage

1820

Lastpage

1822

Abstract

Ultrafast all-optical cross-phase modulation (XPM) associated with intersubband transition was generated by silicon ion implantation in undoped InGaAs-AlAsSb coupled double quantum wells. This transverse-magnetic-pump-induced XPM for transverse-electric probe has spectral and temporal features superior to other polarization combinations. The XPM power efficiency in the 500- μm-long implanted waveguide was evaluated to be ~ 0.054 rad/pJ . This technique based on ion implantation can be used to monolithically integrate the novel XPM with other quantum-well-based functional modules.

Keywords

III-V semiconductors; aluminium compounds; elemental semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; integrated optics; ion implantation; light polarisation; optical modulation; optical waveguides; phase modulation; quantum well devices; silicon; InGaAs-AlAsSb:Si; intersubband transition; optical waveguides; polarization; power efficiency; silicon ion implantation; size 500 mum; spectral features; temporal features; transverse-electric probe; transverse-magnetic-pump-induced modulation; ultrafast alloptical cross-phase modulation generation; undoped coupled double III-V quantum wells; Dispersion; Ion implantation; Optical waveguides; Phase modulation; Probes; Quantum wells; Ion implantation; phase modulation; quantum-well devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2010.2088117

Filename

5605232