Title :
A two-dimensional simulation of organic transistors
Author :
Alam, Muhammad A. ; Dodabalapur, Ananth ; Pinto, Mark R.
Author_Institution :
Lucent Technol., Bell Labs., Murray Hill, NJ, USA
fDate :
8/1/1997 12:00:00 AM
Abstract :
In this paper, we analyze the operation of organic thin-film transistors (TFT´s) using two-dimensional (2-B) numerical simulation to: (1) validate the use of simple MOSFET theory to describe the above-threshold behavior; (2) clarify the subthreshold characteristics, and short-channel effects; and (3) illustrate the operation of organic bilayer devices. Our analysis clarifies a number of issues that can help in device design. We also point out differences between the material parameters used in Si-MOSFET and organic FET simulation, and discuss the circumstances under which a semiconductor device simulator can be used for the simulation of organic transistors
Keywords :
organic compounds; organic semiconductors; semiconductor device models; thin film transistors; FET; MOSFET theory; bilayer device; organic thin-film transistor; semiconductor device; short-channel effect; subthreshold characteristics; two-dimensional numerical simulation; Analytical models; Circuit simulation; MOSFETs; Numerical simulation; Organic materials; Semiconductor devices; Semiconductor materials; Substrates; Thin film transistors; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
