An InP HEMT W-band amplifier with monolithically integrated HBT bias regulation

Author

Kobayashi, K.W. ; Wang, H. ; Lai, R. ; Tran, L.T. ; Block, T.R. ; Liu, P.H. ; Cowles, J. ; Chen, Y.C. ; Huang, T.W. ; Oki, A.K. ; Yen, H.C. ; Streit, D.C.

Author_Institution

Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

Volume

7

Issue

8

fYear

1997

fDate

8/1/1997 12:00:00 AM

Firstpage

222

Lastpage

224

Abstract

This paper presents the results of the first W-band InP-based high electron mobility transistor-heterojunction bipolar transistor (HEMT-HBT) monolithic microwave integrated circuit (MMIC). The InP-based HBT and HEMT devices are monolithically integrated using selective molecular beam epitaxy (MBE). The amplifier demonstrates the highest frequency performance MMIC so far obtained with this technology. A single-stage HBT op amp current regulator is integrated with a single-stage HEMT amplifier in order to regulate and self-bias the MEMT device over process, temperature, and age variations. The HBT regulates the HEMT bias to within 3% of the bias current while consuming only a small fraction of the total dc power. The HEMT W-band amplifier achieves a radio frequency (RF) gain of 8.25 and 5.9 dB at 77 and 94 GHz, respectively. A minimum noise figure of 4.2 dB was also recorded at 93.5 GHz. The RF performance achieved from the HEMT amplifier using the InP-based HEMT-HBT integrated technology is comparable to that of InP-based single-technology HEMT performance

Keywords

III-V semiconductors; MIMIC; MMIC amplifiers; indium compounds; integrated circuit measurement; integrated circuit noise; millimetre wave amplifiers; molecular beam epitaxial growth; operational amplifiers; semiconductor growth; 4.2 dB; 5.9 dB; 77 GHz; 8.25 dB; 93.5 GHz; 94 GHz; InAlAs-InGaAs-InP; InP; InP HEMT W-band amplifier; RF gain; W-band InP-based HEMT-HBT MMIC; minimum noise figure; monolithically integrated HBT bias regulation; selective molecular beam epitaxy; single-stage HBT op amp current regulator; single-stage HEMT amplifier; Bipolar transistors; Electron mobility; HEMTs; Heterojunction bipolar transistors; Indium phosphide; MMICs; Microwave devices; Molecular beam epitaxial growth; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.605484

Filename

605484