Title :
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations
Author :
Silvestri, Luca ; Reggiani, Susanna ; Gnani, Elena ; Gnudi, Antonio ; Baccarani, Giorgio
Author_Institution :
Ercole De Castro Adv. Res. Center on Electron. Syst., Univ. of Bologna, Bologna, Italy
Abstract :
An easy-to-implement hole mobility model, which accurately predicts low-field mobility in bulk MOSFETs and ultrathin-body (UTB) silicon-on-insulator FETs with different crystal orientations, is developed. The model accounts for the influence of the surface orientation and the inplane current-flow direction on effective masses, subband repopulation, and scattering rates. The effects induced by extremely small silicon thicknesses are also addressed. A good agreement with the experimental mobilities of bulk and UTB FETs with silicon thicknesses from 60 nm to values as small as about 2.7 and 2.3 nm is demonstrated for devices with (100) and (110) substrates, respectively.
Keywords :
electron mobility; power MOSFET; silicon-on-insulator; UTB FET; bulk MOSFET; channel orientations; crystal orientations; easy-to-implement hole mobility model; inplane current-flow direction; low-field mobility model; scattering rates; silicon thicknesses; subband repopulation; surface orientation; ultrathin-body SOI p-MOSFET; ultrathin-body silicon-on-insulator FET; Effective mass; MOSFETs; Optical scattering; Phonons; Silicon on insulator technology; Crystal orientation; mobility model; silicon-on-insulator (SOI) MOSFETs; ultrathin silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2078821
