A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations

Author

Silvestri, Luca ; Reggiani, Susanna ; Gnani, Elena ; Gnudi, Antonio ; Baccarani, Giorgio

Author_Institution

Ercole De Castro Adv. Res. Center on Electron. Syst., Univ. of Bologna, Bologna, Italy

Volume

57

Issue

12

fYear

2010

Firstpage

3287

Lastpage

3294

Abstract

An easy-to-implement hole mobility model, which accurately predicts low-field mobility in bulk MOSFETs and ultrathin-body (UTB) silicon-on-insulator FETs with different crystal orientations, is developed. The model accounts for the influence of the surface orientation and the inplane current-flow direction on effective masses, subband repopulation, and scattering rates. The effects induced by extremely small silicon thicknesses are also addressed. A good agreement with the experimental mobilities of bulk and UTB FETs with silicon thicknesses from 60 nm to values as small as about 2.7 and 2.3 nm is demonstrated for devices with (100) and (110) substrates, respectively.

Keywords

electron mobility; power MOSFET; silicon-on-insulator; UTB FET; bulk MOSFET; channel orientations; crystal orientations; easy-to-implement hole mobility model; inplane current-flow direction; low-field mobility model; scattering rates; silicon thicknesses; subband repopulation; surface orientation; ultrathin-body SOI p-MOSFET; ultrathin-body silicon-on-insulator FET; Effective mass; MOSFETs; Optical scattering; Phonons; Silicon on insulator technology; Crystal orientation; mobility model; silicon-on-insulator (SOI) MOSFETs; ultrathin silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2078821

Filename

5605244