DocumentCode
1354938
Title
Low threshold lasing operation of narrow stripe oxide-confined GaInNAs/GaAs multiquantum well lasers at 1.28 μm
Author
Illek, S. ; Ultsch, A. ; Borchert, B. ; Egorov, A.Y. ; Riechert, H.
Author_Institution
Corporate Res. Photonics, Infineon Technol., Munich, Germany
Volume
36
Issue
8
fYear
2000
fDate
4/13/2000 12:00:00 AM
Firstpage
725
Lastpage
726
Abstract
The realisation is reported of oxide-confined narrow-stripe lasers incorporating GaInNAs/GaAs multiquantum wells (MQWs) grown by MBE using an RF nitrogen plasma source. Two oxidation layers are employed to achieve proper current confinement and waveguiding. These lasers, emitting close to 1300 nm, show record threshold currents as low as 11 mA. Slope efficiencies of 0.39 W/A and 15 mW output power at 120°C under pulsed operation demonstrate the high potential of the GaInNAs active material
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; molecular beam epitaxial growth; quantum well lasers; waveguide lasers; 1.28 micron; 11 mA; 120 C; 15 mW; GaInAsN active material; GaInNAs-GaAs; MBE growth; MQW lasers; N; RF N plasma source; current confinement; low threshold lasing operation; multiquantum well lasers; narrow stripe oxide-confined laser; oxidation layers; semiconductor laser; waveguiding;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000586
Filename
850556
Link To Document