Title :
Numerical simulation of charge transfer and light emission in SrS:Ce thin-film electroluminescent devices
Author :
Neyts, Kristiaan
Author_Institution :
Dept. of Electron. & Inf. Syst., Ghent Univ., Belgium
fDate :
9/1/1996 12:00:00 AM
Abstract :
When an AC voltage is applied to a thin-film electroluminescent device with an SrS:Ce phosphor layer, the current flowing through the phosphor layer and the emitted light can be complex functions of time. In order to explain the observed current and light waveforms, a numerical model has been constructed for the electrical and optical behavior of such a device. This model is based on the tunneling of electrons from the phosphor-insulator interface, multiplication of the electron current and creation of positive space charge in the high field region, recombination of electrons with the positive charges in the low-field region, and a back-flow of electrons from the anodic interface when the field there changes sign. The rather simple model is able to simulate a number of features observed in current and light characteristics quite well. It could serve as a reference for the interpretation of new experimental results
Keywords :
cerium; charge exchange; electroluminescent devices; high field effects; modelling; numerical analysis; phosphors; simulation; space charge; strontium compounds; thin film devices; tunnelling; AC voltage; SrS:Ce; SrS:Ce phosphor layer; anodic interface; charge transfer; current waveforms; electrical behavior; electron current multiplication; electron tunnelling; electrons back-flow; high field region; light emission; light waveforms; low-field region recombination; numerical model; numerical simulation; optical behavior; phosphor-insulator interface; positive space charge; thin-film electroluminescent devices; Charge transfer; Electroluminescent devices; Electron optics; Numerical models; Numerical simulation; Optical devices; Phosphors; Stimulated emission; Thin film devices; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on