Parametric expression of subthreshold slope using threshold voltage parameters for MOSFET statistical modeling

Author

Kang, Seog-Weon ; Min, Kyeong-Sik ; Lee, Kwyro

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea

Volume

43

Issue

9

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

1382

Lastpage

1386

Abstract

In this paper, we propose a newly developed subthreshold slope (ideality factor) model, whose parameters are solely determined from the threshold voltage data. We succeed in expressing the ideality factor in terms of the threshold voltage parameters obtained from the body and DIBL effects, which can take care of its dependence on the process data such as channel length, oxide thickness, substrate doping profile, and junction depth in a parametric way. We prove the validity of our model by comparing it with simulation and measurement results from nMOSFET devices with various oxide thickness, channel length, and doping profile

Keywords

MOSFET; doping profiles; equivalent circuits; semiconductor device models; statistical analysis; DIBL effect; MOSFET statistical modeling; body effect; channel length; drain induced barrier lowering; equivalent circuit model; ideality factor; junction depth; nMOSFET devices; oxide thickness; parametric expression; simulation; substrate doping profile; subthreshold slope model; threshold voltage parameters; Capacitance; Channel bank filters; Doping profiles; Length measurement; MOSFET circuits; Semiconductor process modeling; Solid modeling; Thickness measurement; Threshold voltage; Variable structure systems;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.535322

Filename

535322