Title :
Monolithic, multiple-wavelength vertical-cavity surface-emitting laser arrays by surface-controlled MOCVD growth rate enhancement and reduction
Author :
Ortiz, G.G. ; Luong, S.Q. ; Sun, S.Z. ; Cheng, Julian ; Hou, H.Q. ; Vawter, G.A. ; Hammons, B.E.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
Monolithic, multiple-wavelength vertical-cavity surface-emitting laser (VCSEL) arrays have been obtained by the surface-controlled enhancement and reduction of the MOCVD epitaxial growth rate, achieving a periodic, graded wavelength span greater than 30 nm. Room-temperature (RT), electrically pumped continuous-wave (CW) lasing is demonstrated, with uniform threshold currents of 5.5/spl plusmn/0.5 mA with typical output powers of 0.5 mW. We show here for the first time both the enhancement and the reduction of the growth rate of the entire VCSEL structure and demonstrate the controlled variation of the VCSEL lasing wavelength over a widened spectral range by exploiting both effects.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; integrated optics; laser beams; laser cavity resonators; optical fabrication; quantum well lasers; semiconductor laser arrays; surface emitting lasers; vapour phase epitaxial growth; 0.5 mW; 5.5 mA; AlGaAs-GaAs; MOCVD epitaxial growth rate; growth rate; lasing wavelength; monolithic multiple-wavelength vertical-cavity surface-emitting laser arrays; output powers; periodic graded wavelength span; room-temperature electrically pumped continuous-wave lasing; spectral range; surface-controlled MOCVD growth rate enhancement; uniform threshold currents; vertical-cavity surface-emitting laser; Etching; Fiber lasers; MOCVD; Molecular beam epitaxial growth; Optical arrays; Optical surface waves; Sun; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
