DocumentCode
1355037
Title
60 GHz high output power uni-travelling-carrier photodiodes with integrated bias circuit
Author
Ito, H. ; Ohno, T. ; Fishimi, H. ; Furuta, T. ; Kodama, S. ; Ishibashi, T.
Author_Institution
NTT Photonics Lab., Atsugi, Japan
Volume
36
Issue
8
fYear
2000
fDate
4/13/2000 12:00:00 AM
Firstpage
747
Lastpage
748
Abstract
A millimetre-wave high-output-power uni-travelling-carrier photodiode with a monolithically integrated bias circuit utilising a 1/4-wavelength coplanar waveguide is presented. The device exhibits a high saturated output power of +10 dBm with a bias voltage or -3 V, and -6 dBm without a bias voltage, both at 59.4 GHz
Keywords
MIMIC; MOCVD; microwave photonics; optical fabrication; optical planar waveguides; optical waveguide components; photodiodes; power integrated circuits; power semiconductor diodes; -3 V; 1/4-wavelength coplanar waveguide; 59.4 GHz; 60 GHz; bias voltage; high output power uni-travelling-carrier photodiodes; integrated bias circuit; millimetre-wave high-output-power uni-travelling-carrier photodiode; monolithically integrated bias circuit; saturated output power;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000564
Filename
850572
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