Improved high-temperature performance of 1.3-1.5-/spl mu/m InNAsP-InGaAsP quantum-well microdisk lasers

Author

Bi, W.G. ; Ma, Y. ; Zhang, J.P. ; Wang, L.W. ; Ho, S.T. ; Tu, C.W.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., San Diego, La Jolla, CA, USA

Volume

9

Issue

8

fYear

1997

Firstpage

1072

Lastpage

1074

Abstract

We report for the first time lasing action in the InNAsP-InGaAsP material system. Dramatic improvement in lasing action in a microdisk cavity was observed at elevated temperature up to 70/spl deg/C, which is about 120/spl deg/C higher than that of InGaAs-InGaAsP microdisk. This resulted in the first optically pumped InNAsP-InGaAsP microdisk lasers capable of above room-temperature lasing. The improvement of lasing temperature can be attributed to a large conduction band offset between the quantum well and barriers in the InNAsP-InGaAsP material system.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; optical pumping; quantum well lasers; 1.3 to 1.5 mum; 70 C; InNAsP-InGaAsP; above room-temperature lasing; conduction band offset; elevated temperature; high-temperature performance; lasing action; lasing temperature; microdisk cavity; optically pumped microdisk lasers; quantum well; quantum-well microdisk lasers; Bismuth; Conducting materials; Indium phosphide; Optical materials; Optical pumping; Pump lasers; Quantum well lasers; Quantum wells; Stimulated emission; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.605503

Filename

605503