• DocumentCode
    1355049
  • Title

    Effects of carrier escape and capture processes on quantum well solar cells: a theoretical investigation

  • Author

    Chin-Yi Tsai ; Chin-Yao Tsai

  • Author_Institution
    Dept. of Appl. Phys., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
  • Volume
    3
  • Issue
    6
  • fYear
    2009
  • Firstpage
    300
  • Lastpage
    304
  • Abstract
    A theoretical model is proposed to study the effects of carrier escape and capture processes on the photocurrent of quantum well solar cells (QWSCs). The results show that solar cells with very deep quantum wells (QWs) will suffer from extremely slow escape processes and their photocurrent can be inferior to their bulk counterparts. The results suggest that only when the escape time is at least two-order of magnitude smaller than the carrier lifetime of QWs, solar cells will benefit from QW structures. The optimal band gap energies of QW materials for achieving the maximum photocurrent are also calculated and discussed.
  • Keywords
    III-V semiconductors; carrier lifetime; energy gap; gallium arsenide; photoconductivity; semiconductor quantum wells; solar cells; GaAs; band gap energy; carrier capture; carrier escape; carrier lifetime; p-i-n structure; photocurrent; quantum well solar cells; theoretical model;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IET
  • Publisher
    iet
  • ISSN
    1751-8768
  • Type

    jour

  • DOI
    10.1049/iet-opt.2009.0027
  • Filename
    5353234