DocumentCode
1355049
Title
Effects of carrier escape and capture processes on quantum well solar cells: a theoretical investigation
Author
Chin-Yi Tsai ; Chin-Yao Tsai
Author_Institution
Dept. of Appl. Phys., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan
Volume
3
Issue
6
fYear
2009
Firstpage
300
Lastpage
304
Abstract
A theoretical model is proposed to study the effects of carrier escape and capture processes on the photocurrent of quantum well solar cells (QWSCs). The results show that solar cells with very deep quantum wells (QWs) will suffer from extremely slow escape processes and their photocurrent can be inferior to their bulk counterparts. The results suggest that only when the escape time is at least two-order of magnitude smaller than the carrier lifetime of QWs, solar cells will benefit from QW structures. The optimal band gap energies of QW materials for achieving the maximum photocurrent are also calculated and discussed.
Keywords
III-V semiconductors; carrier lifetime; energy gap; gallium arsenide; photoconductivity; semiconductor quantum wells; solar cells; GaAs; band gap energy; carrier capture; carrier escape; carrier lifetime; p-i-n structure; photocurrent; quantum well solar cells; theoretical model;
fLanguage
English
Journal_Title
Optoelectronics, IET
Publisher
iet
ISSN
1751-8768
Type
jour
DOI
10.1049/iet-opt.2009.0027
Filename
5353234
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