Title :
Silicon-on-insulator asymmetric optical switch based on total internal reflection
Author :
Ce Zhou Zhao ; Ai Hua Chen ; Liu, E.K. ; Li, G.Z.
Author_Institution :
Microelectron. Inst., Xidian Univ., Xi´an, China
Abstract :
Based on the large cross-section single-mode rib waveguide condition, total internal reflection (TIR) and the plasma dispersion effect, a silicon-on-insulator (SOI) asymmetric optical waveguide switch with transverse injection structure has been proposed and fabricated, in which the SOI technique utilizes silicon and silicon dioxide thermal bonding and back-polishing. The device performance is measured at a wavelength of 1.3 μm. It shows that the extinction ratio and insertion loss are less than -18.1 and 6.3 dB, respectively, at an injection current of 60 mA. Response time is 110 ns.
Keywords :
electro-optical switches; integrated optics; light reflection; optical fabrication; optical waveguide components; polishing; rib waveguides; silicon-on-insulator; 1.3 mum; 110 ns; 6.3 dB; 60 mA; SOI asymmetric optical waveguide switch; Si-SiO/sub 2/; back-polishing; extinction ratio; injection current; insertion loss; large cross-section single-mode rib waveguide condition; plasma dispersion effect; response time; thermal bonding; total internal reflection; transverse injection structure; Bonding; Dispersion; Optical reflection; Optical switches; Optical waveguides; Plasma devices; Plasma measurements; Plasma waves; Silicon compounds; Silicon on insulator technology;
Journal_Title :
Photonics Technology Letters, IEEE
