DocumentCode
1355355
Title
Simplified and accurate power-analysis method for deep-submicron ASIC designs
Author
Huang, M. ; Kwok, R. ; Chan, S.-P.
Author_Institution
Virtual Silicon Technol. Inc., Sunnyvale, CA, USA
Volume
147
Issue
3
fYear
2000
fDate
6/1/2000 12:00:00 AM
Firstpage
175
Lastpage
182
Abstract
The algorithm, called Simplified Power Equations (SPE), derived on the basis of a host of transistor level power analyses of standard cells, properly represents the dependency of average power dissipation on output load, input slope and input state. Using the algorithm, power models of standard cells are significantly simplified while preserving a high level of accuracy. The efficiency of a gate-level power analysis is improved due to the simplicity of the power models. The algorithm can be extended to register transfer level (RTL) power analysis with the introduction of an RTL library
Keywords
VLSI; application specific integrated circuits; cellular arrays; circuit analysis computing; integrated circuit design; average power dissipation; deep-submicron ASIC designs; gate-level power analysis; input slope; input state; output load; power models; register transfer level; simplified power equations; standard cells; transistor level power analyses;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings -
Publisher
iet
ISSN
1350-2409
Type
jour
DOI
10.1049/ip-cds:20000234
Filename
850617
Link To Document