• DocumentCode
    1355355
  • Title

    Simplified and accurate power-analysis method for deep-submicron ASIC designs

  • Author

    Huang, M. ; Kwok, R. ; Chan, S.-P.

  • Author_Institution
    Virtual Silicon Technol. Inc., Sunnyvale, CA, USA
  • Volume
    147
  • Issue
    3
  • fYear
    2000
  • fDate
    6/1/2000 12:00:00 AM
  • Firstpage
    175
  • Lastpage
    182
  • Abstract
    The algorithm, called Simplified Power Equations (SPE), derived on the basis of a host of transistor level power analyses of standard cells, properly represents the dependency of average power dissipation on output load, input slope and input state. Using the algorithm, power models of standard cells are significantly simplified while preserving a high level of accuracy. The efficiency of a gate-level power analysis is improved due to the simplicity of the power models. The algorithm can be extended to register transfer level (RTL) power analysis with the introduction of an RTL library
  • Keywords
    VLSI; application specific integrated circuits; cellular arrays; circuit analysis computing; integrated circuit design; average power dissipation; deep-submicron ASIC designs; gate-level power analysis; input slope; input state; output load; power models; register transfer level; simplified power equations; standard cells; transistor level power analyses;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2409
  • Type

    jour

  • DOI
    10.1049/ip-cds:20000234
  • Filename
    850617