Title :
Photoluminescence investigation of the carrier confining properties of multiquantum barriers
Author :
Morrison, A.P. ; Considine, L. ; Walsh, S. ; Cordero, N. ; Lambkin, J.D. ; O´Connor, G.M. ; Daly, E.M. ; Glynn, T.J. ; van der Poel, C.J.
Author_Institution :
Technol. Characterization & Modeling Group, Nat. Microelectron. Res. Centre, Cork, Ireland
fDate :
8/1/1997 12:00:00 AM
Abstract :
A comparative luminescence study of two Ga0.52In0.48P-(Al0.5Ga0.5) 0.52In0.48P single-quantum-well (SQW) samples with bulk and multiquantum barrier (MQB) barriers is presented. When excess carriers are only created in the quantum wells (QW´s) of the samples by resonant excitation using a dye laser, the luminescence efficiency of both samples as a function of temperature is found to be essentially identical. We find, therefore, no evidence for any enhancement in the confining potential of the MQB sample over the bulk barrier sample. From Arrhenius plots of the integrated luminescence intensity, it is found that carrier loss from the QW is dominated by a nonradiative loss mechanism with an activation energy considerably smaller than that expected from direct thermal loss of electrons and holes into the barriers. We suggest that the improved device characteristics reported for lasers containing MQB´s is due to effects other than the quantum interference of electrons
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; nonradiative transitions; photoluminescence; quantum well lasers; semiconductor quantum wells; 600 to 700 nm; Arrhenius plots; Ga0.52In0.48P -(Al0.5Ga0.5 )0.52In0.48P; GaInP-AlGaInP; activation energy; bulk barrier sample; carrier confining properties; carrier loss; comparative luminescence study; confining potential; device characteristics; dye laser; excess carriers; integrated luminescence intensity; lasers; luminescence efficiency; multiquantum barriers; nonradiative loss mechanism; quantum interference; resonant excitation; single-quantum-well samples; Electrons; Interference; Luminescence; Microelectronics; Photoluminescence; Quantum well lasers; Semiconductor lasers; Superlattices; Temperature; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
