Title :
Optoelectronic InP-InGaAs smart pixels for optical interconnections and computing
Author :
Kim, Dong-Su ; Dries, J. Chris ; Gokhale, Milind R. ; Forrest, Stephen R.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
fDate :
8/1/1997 12:00:00 AM
Abstract :
We describe InP-InGaAs optoelectronic smart pixels for applications in optical interconnection and computing. These circuits consist of monolithically integrated p-i-n photodiodes, heterojunction bipolar transistor (HBT) receivers and transmitters, and surface-bonded folded-cavity surface-emitting lasers (FCSEL´s). Design, fabrication, and performance of two different circuits: a high-sensitivity pixel, and a high-bandwidth pixel with logic functions are discussed. We achieve a minimum switching energy of 6 fJ, a maximum pixel bandwidth of 800 MHz, and an optoelectronic gain of 3. To our knowledge, these are the best overall performance characteristics of any optoelectronic smart pixel technology and are competitive or superior to that achieved using all-electronic interconnects
Keywords :
III-V semiconductors; bipolar integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; optical computing; optical interconnections; p-i-n photodiodes; smart pixels; surface emitting lasers; 6 fJ; 800 MHz; HBT transmitters; InP-InGaAs; InP-InGaAs optoelectronic smart pixels; OEIC fabrication; gas-source MBE; heterojunction bipolar transistor receivers; high-bandwidth pixel; high-sensitivity pixel; logic functions; maximum pixel bandwidth; minimum switching energy; monolithically integrated p-i-n photodiodes; optical computing; optical interconnections; optoelectronic gain; surface-bonded folded-cavity surface-emitting lasers; Circuits; Heterojunction bipolar transistors; Optical computing; Optical device fabrication; Optical interconnections; Optical receivers; Optical transmitters; PIN photodiodes; Smart pixels; Surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
