Title :
Simulation of PNP InAlAs/InGaAs heterojunction bipolar transistors
Author :
Shi, S. ; Roenker, K.P. ; Kumar, T. ; Cahay, M.M. ; Stanchina, William E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA
fDate :
9/1/1996 12:00:00 AM
Abstract :
The performance of single heterojunction InAlAs/InGaAs PNP heterojunction bipolar transistors is modeled numerically and good agreement is found with experimental measurements. Peak experimental values of fT=14 GHz, fMax=22 GHz, β=170 and U=38 dB are obtained near a collector current density of 104 A/cm2 for a nonoptimized device
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; simulation; 14 GHz; 22 GHz; InAlAs-InGaAs; PNP device; heterojunction bipolar transistors; model; p-n-p HBT; Acoustic scattering; Circuit simulation; Current density; Heterojunction bipolar transistors; Indium gallium arsenide; Material properties; Numerical models; Optical buffering; Optical scattering; Stimulated emission;
Journal_Title :
Electron Devices, IEEE Transactions on
