Title :
Vacuum-sheath interconnect structure for dense memory
Author :
Park, Jongho ; Hu, Chuanmin
Author_Institution :
Dept. of Electron. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
A novel mostly-air interconnect structure is proposed. Every metal line is surrounded by an air vacuum sheath on all sides and supported on the bottom by a series of solid dielectric beams. The vias are also surrounded by vacuum sheaths. Computer simulation shows that the total capacitance of the interconnect is reduced by about 45% and the RC delay is decreased about 55%. The effective dielectric constant can be reduced to about 1.7 using existing dielectric with k%2.9.
Keywords :
RC circuits; integrated circuit interconnections; integrated memory circuits; permittivity; RC delay; air vacuum sheath; dense memory; effective dielectric constant; interconnect capacitance; solid dielectric beams; vacuum-sheath interconnect structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.1980
