Title :
Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics
Author :
Rao, V. Ramgopal ; Sharma, D.K. ; Vasi, J.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Bombay, India
fDate :
9/1/1996 12:00:00 AM
Abstract :
In this study we report for the first time results on neutral electron trap generation in reoxidised nitrided oxide dielectrics under various radiation doses and bias conditions and compare the results with the conventional oxides. We see very little electron trap creation in RNO dielectrics for radiation doses up to 5 Mrad (Si) and for bias fields up to ±2.5 MV/cm. We explain our results in RNO and oxide dielectrics using a three step defect creation model
Keywords :
MOS capacitors; dielectric thin films; electron traps; nitridation; oxidation; radiation effects; 5 Mrad; MOS capacitor; ONO gate dielectric; RNO dielectrics; SiO2-Si3N4-SiO2; bias conditions; irradiation; neutral electron trap generation; reoxidized nitrided gate dielectrics; three step defect creation model; Annealing; Boron; Dielectrics and electrical insulation; Electron traps; MOS capacitors; Nitrogen; Semiconductor device modeling; Silicon; Thickness control; Ultra large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
