DocumentCode
1355884
Title
An HSPICE HBT model for InP-based single HBTs
Author
Yang, K. ; Gutierrez-Aitken, A.L. ; Zhang, X. ; Bhattacharya, P. ; Haddad, G.I.
Author_Institution
Dept. of Electr. Eng., Michigan Univ., Ann Arbor, MI, USA
Volume
43
Issue
9
fYear
1996
fDate
9/1/1996 12:00:00 AM
Firstpage
1470
Lastpage
1472
Abstract
An HBT model for InP-based single HBTs (SHBTs) was developed based on the conventional Gummel-Poon large-signal BJT model available in HSPICE. Several typical characteristics observed from InP-based SHBTs, such as soft breakdown and collector transit-time delay effects, were modeled through a macro modeling approach. Excellent agreement has been achieved between the experimental and calculated results based on the model
Keywords
III-V semiconductors; SPICE; delays; electric breakdown; heterojunction bipolar transistors; indium compounds; semiconductor device models; Gummel-Poon large-signal model; HSPICE HBT model; InP; InP-based single HBTs; collector transit-time delay effects; macro modeling approach; soft breakdown; Circuits; Delay effects; Electric breakdown; Electron devices; Heterojunction bipolar transistors; Indium compounds; Integrated optoelectronics; Performance analysis; Physics; Ultra large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.535336
Filename
535336
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