• DocumentCode
    1356006
  • Title

    AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current

  • Author

    Nanjo, T. ; Takeuchi, Masaru ; Imai, A. ; Suita, M. ; Oishi, Tsukasa ; Abe, Y. ; Yagyu, E. ; Kurata, T. ; Tokuda, Yoko ; Aoyagi, Y.

  • Author_Institution
    Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Amagasaki, Japan
  • Volume
    45
  • Issue
    25
  • fYear
    2009
  • Firstpage
    1346
  • Lastpage
    1348
  • Abstract
    The buffer layer in AlGaN channel HEMTs to suppress the off-state drain leakage current is investigated. By employing an AlN for the buffer layer in Al0.39Ga0.61N/Al0.16Ga0.84N HEMTs, the off-state drain leakage current was sufficiently suppressed and the breakdown voltage was enhanced. It was considered that employing the AlN for the buffer layer is important for extracting the superior material properties of the AlGaN in the channel layer.
  • Keywords
    aluminium compounds; electric breakdown; high electron mobility transistors; leakage currents; wide band gap semiconductors; AlGaN; AlN; breakdown voltage; buffer layer; channel HEMT; channel layer; high electron mobility transistors; low off-state drain leakage current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.2711
  • Filename
    5353375
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1356006