Title :
Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisation
Author :
Lu, C.-Y. ; Chang, Edward Yi ; Huang, Jui-Che ; Chang, Chao-Tsun ; Lee, Ching-Ting
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
An AlGaN/GaN high electron mobility transistor (HEMT) with tungsten nitride (WNx) Schottky gate fabricated on a sapphire substrate is presented. Gate forward current stress was chosen to evaluate the stability of the Schottky gate. After stress, this WNx HEMT remains stable, while the conventional Ni/Au HEMT shows performance degradation and failure. The maximum output power density from this device is 5 W/mm at 2 GHz. A combination of these findings indicates the robust performance of this WNx material and its potential as a Schottky gate for AlGaN/GaN HEMTs.
Keywords :
Schottky gate field effect transistors; UHF field effect transistors; aluminium compounds; gallium compounds; gold; high electron mobility transistors; nickel; semiconductor device metallisation; tungsten compounds; wide band gap semiconductors; AlGaN-GaN; HEMT; Ni-Au; Schottky gate stability; WNx; frequency 2 GHz; gate forward current stress; gate metallisation; high electron mobility transistors; sapphire substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.1643
