RF and 1/f noise investigations on MESFETs and circuits transplanted by epitaxial lift off

Author

Morf, Thomas ; Brys, Catherine ; Van Daele, Peter ; Demeester, Piet ; Benedickter, Hansruedi ; Bächtold, Werner

Author_Institution

Lab. for Electromagn. Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland

Volume

43

Issue

9

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

1489

Lastpage

1494

Abstract

In this paper, we present the results of RF and noise measurements of MESFETs transplanted by epitaxial lift off (ELO). ELO is a technology by which epitaxially grown layers are lifted off from their growth substrate and subsequently reattached to a new host substrate. In the experiments described here a 800 mm thick GaAs film containing MESFETs or complete microwave circuits is transplanted onto semi-insulating InP. Gate leakage current, RF characteristics, and noise performance of MESFETs and GaAs circuits are compared before and after ELO. Special attention was given to low-frequency (1/f) noise, 1/f noise is believed to be caused by surface as well as bulk effects. An increase in 1/f noise could have been predicted since a new surface is exposed during the transplantation process. The mechanical stress during the transplantation could cause crystal damage creating additional traps which could also result in an increase in 1/f noise

Keywords

1/f noise; III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; S-parameters; Schottky gate field effect transistors; etching; field effect MMIC; gallium arsenide; indium compounds; integrated circuit measurement; integrated circuit noise; integrated circuit technology; integrated optoelectronics; leakage currents; semiconductor device noise; 1/f noise measurements; 800 nm; ELO; GaAs film; GaAs-InP; InP; MESFET; MMIC; RF noise measurements; crystal damage; epitaxial lift off; gate leakage current; growth substrate; host substrate; mechanical stress; microwave circuits; semi-insulating InP; traps creation; Circuit noise; Gallium arsenide; Indium phosphide; Low-frequency noise; MESFETs; Microwave circuits; Noise measurement; Radio frequency; Substrates; Thick film circuits;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.535339

Filename

535339