DocumentCode
135610
Title
High efficiency Solar Cell using a new material
Author
Ganguly, Amar K. ; Kabi, Debarun ; Ganguly, Anshuman
Author_Institution
Asansol Eng. Coll., Asansol, India
fYear
2014
fDate
16-17 Jan. 2014
Firstpage
10
Lastpage
13
Abstract
A High efficiency Solar Cell is reported using Quasi-mono-crystalline silicon (QMS) with nanovoids. It is used as the Semiconductor material. QMS of suitable dimension shows significant enhancement of optical absorptance which in turn provides higher efficiency of the solar cell. Properties of the QMS have been studied and compared with crystalline silicon. The absorptance of QMS at different wavelength shows higher than that of crystalline silicon. Variation of carrier density with void radius within the material is shown at different acceptor concentration. The absorption co-efficient of material at different wavelength are represented graphically for both QMS and simple silicon. It is observed that absorption co-efficient/cm of QMS is higher than that of silicon and hence solar cell using QMS provides higher efficiency than that of silicon. The reflection loss is simulated considering film stack of porous silicon antireflection coating.
Keywords
antireflection coatings; carrier density; elemental semiconductors; porous semiconductors; silicon; solar cells; voids (solid); QMS; Si; absorption coefficient; acceptor concentration; carrier density; high efficiency solar cell; nanovoids; optical absorptance; porous silicon antireflection coating; quasimono-crystalline silicon; reflection loss; semiconductor material; void radius; Annealing; Coatings; Hafnium; Indexes; Photovoltaic cells; Reflection; Silicon; Quasi-mono-crystalline silicon; absorptance; anti-reflection coating; fill factor; nano-void; porous silicon; void-radius;
fLanguage
English
Publisher
ieee
Conference_Titel
Non Conventional Energy (ICONCE), 2014 1st International Conference on
Conference_Location
Kalyani
Print_ISBN
978-1-4799-3339-6
Type
conf
DOI
10.1109/ICONCE.2014.6808692
Filename
6808692
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