Title :
1.3-μm InGaAsP-InP n-type modulation-doped strained multiquantum-well lasers
Author :
Nakahara, Kouji ; Uomi, Kaszuhisa ; Tsuchiya, Tomonobu ; Niwa, Atsuko ; Haga, Tohru ; Taniwatari, Tsuyoshi
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fDate :
4/1/1997 12:00:00 AM
Abstract :
The use of n-type modulation doping to reduce the threshold current, the carrier lifetime, and the internal loss in 1.3-μm InGaAsP-InP strained multiquantum-well (MQW) lasers is experimentally demonstrated. The threshold current density, the carrier lifetime, and the internal loss were reduced by about 33%, 36%, and 28%, respectively, as compared with an undoped MQW laser. Moreover, the turn-on delay time in the n-type modulation-doped MQW lasers with a low-leakage buried heterostructure was reduced by about 35%. These results confirm the suitability of this type of laser for use in the basic structure of a monolithic laser array used as a light source for high-density parallel optical interconnection
Keywords :
III-V semiconductors; buried layers; carrier lifetime; current density; delays; gallium arsenide; indium compounds; optical interconnections; optical losses; quantum well lasers; semiconductor doping; waveguide lasers; 1.3 mum; InGaAsP-InP; InGaAsP-InP n-type modulation-doped strained multiquantum-well lasers; carrier lifetime; high-density parallel optical interconnection; internal loss; low-leakage buried heterostructure; monolithic laser array; n-type modulation doping; strained MQW lasers; threshold current density; turn-on delay time; Charge carrier lifetime; Delay effects; Epitaxial layers; Laser theory; Optical arrays; Optical interconnections; Quantum well devices; Semiconductor laser arrays; Threshold current; Waveguide lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.605650
