InP-InGaAs single HBT technology for photoreceiver OEIC´s at 40 Gb/s and beyond

Author

Huber, D. ; Bauknecht, R. ; Bergamaschi, C. ; Bitter, M. ; Huber, A. ; Morf, T. ; Neiger, A. ; Rohner, M. ; Schnyder, I. ; Schwarz, V. ; Jackel, A.

Author_Institution

Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland

Volume

18

Issue

7

fYear

2000

fDate

7/1/2000 12:00:00 AM

Firstpage

992

Lastpage

1000

Abstract

We describe an advanced InP-InGaAs-based technology for the monolithic integration of pin-photodiodes and SHBT-transistors. Both devices are processed using the same epitaxial grown layer structure. Employing this technology, we have designed and fabricated two photoreceivers achieving transimpedance gains of 170 /spl Omega//380 /spl Omega/ and optical/electrical bandwidths of 50 GHz/34 GHz. To the best of our knowledge, this is the highest bandwidth of any heterojunction bipolar transistor (HBT)-based photoreceiver optoelectronic integrated circuit (OEIC) published to date. We even predict a bandwidth of 60 GHz for the same circuit topology by a simple reduction of the photodiode diameter and an adjustment of the feedback resistor value.

Keywords

III-V semiconductors; bipolar integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 34 GHz; 50 GHz; 60 GHz; InP-InGaAs; InP-InGaAs single HBT technology; InP-InGaAs-based technology; SHBT-transistors; circuit topology; epitaxial grown layer structure; feedback resistor value; heterojunction bipolar transistor based photoreceiver; monolithic integration; optical/electrical bandwidths; optoelectronic integrated circuit; photodiode diameter; photoreceiver OEIC; photoreceivers; pin-photodiodes; transimpedance gains; Bandwidth; Bipolar integrated circuits; Circuit topology; Heterojunction bipolar transistors; Integrated circuit technology; Monolithic integrated circuits; Optical design; Optical feedback; Optoelectronic devices; Photodiodes;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.850745

Filename

850745