Title :
InP-InGaAs single HBT technology for photoreceiver OEIC´s at 40 Gb/s and beyond
Author :
Huber, D. ; Bauknecht, R. ; Bergamaschi, C. ; Bitter, M. ; Huber, A. ; Morf, T. ; Neiger, A. ; Rohner, M. ; Schnyder, I. ; Schwarz, V. ; Jackel, A.
Author_Institution :
Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
fDate :
7/1/2000 12:00:00 AM
Abstract :
We describe an advanced InP-InGaAs-based technology for the monolithic integration of pin-photodiodes and SHBT-transistors. Both devices are processed using the same epitaxial grown layer structure. Employing this technology, we have designed and fabricated two photoreceivers achieving transimpedance gains of 170 /spl Omega//380 /spl Omega/ and optical/electrical bandwidths of 50 GHz/34 GHz. To the best of our knowledge, this is the highest bandwidth of any heterojunction bipolar transistor (HBT)-based photoreceiver optoelectronic integrated circuit (OEIC) published to date. We even predict a bandwidth of 60 GHz for the same circuit topology by a simple reduction of the photodiode diameter and an adjustment of the feedback resistor value.
Keywords :
III-V semiconductors; bipolar integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 34 GHz; 50 GHz; 60 GHz; InP-InGaAs; InP-InGaAs single HBT technology; InP-InGaAs-based technology; SHBT-transistors; circuit topology; epitaxial grown layer structure; feedback resistor value; heterojunction bipolar transistor based photoreceiver; monolithic integration; optical/electrical bandwidths; optoelectronic integrated circuit; photodiode diameter; photoreceiver OEIC; photoreceivers; pin-photodiodes; transimpedance gains; Bandwidth; Bipolar integrated circuits; Circuit topology; Heterojunction bipolar transistors; Integrated circuit technology; Monolithic integrated circuits; Optical design; Optical feedback; Optoelectronic devices; Photodiodes;
Journal_Title :
Lightwave Technology, Journal of
