Title :
Low voltage NVGTM: a new high performance 3 V/5 V flash technology for portable computing and telecommunications applications
Author :
Bergemont, Albert ; Chi, Min-Hwa ; Haggag, Hosam
Author_Institution :
Fairchild Res. Centre, Nat. Semicond. Corp., Santa Clara, CA, USA
fDate :
9/1/1996 12:00:00 AM
Abstract :
A new concept for low voltage NOR Virtual Ground (NVGTM) flash memory with a fast access time is introduced. New array concepts and process technologies are introduced to achieve programming by 5 V Vpp and reading at 3 V±10% Vcc . The array performance is enhanced by segmentation and using extra access transistor for each segment. The control of the erased cell threshold voltage distribution is one of the key issues for the 3 V read operation in low voltage flash. The erase threshold distribution is minimized by Fowler-Nordheim tunneling and hot electron injection self-recovering techniques
Keywords :
CMOS memory circuits; EPROM; PLD programming; hot carriers; tunnelling; voltage distribution; 3 V; 5 V; Fowler-Nordheim tunneling; LV flash operation; NOR virtual ground flash memory; NVG flash memory; array performance; erase threshold distribution; erased cell threshold voltage distribution; hot electron injection self-recovery; low voltage type; portable computing applications; portable telecommunications applications; programming; segmentation; CMOS memory circuits; EPROM; Flash memory; Flash memory cells; High performance computing; Low voltage; Portable computers; Telecommunication computing; Telecommunication control; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
