Title :
Noise characteristics of transistors fabricated in an advanced silicon bipolar technology
Author :
Aufinger, Klaus ; Böck, Josef ; Meister, Thomas F. ; Popp, Josef
Author_Institution :
Corp. Res. & Dev., Siemens AG, Munich, Germany
fDate :
9/1/1996 12:00:00 AM
Abstract :
The RF noise of transistors fabricated in an advanced silicon bipolar technology is investigated. The influence of the lateral scaling on the noise figure is studied experimentally and compared with the predictions of conventional noise modeling. Reasonable agreement is found without any fitting of model parameters to the measured noise characteristics. The potential of the investigated technology for low-noise applications is demonstrated by noise figures below 1 dB for frequencies up to 2 GHz and below 2 dB up to 7 GHz
Keywords :
bipolar transistors; elemental semiconductors; semiconductor device models; semiconductor device noise; silicon; 1 dB; 2 GHz; 2 dB; 7 GHz; RF noise; Si; advanced Si bipolar technology; lateral scaling; low-noise applications; noise characteristics; noise figure; transistors; Bipolar transistors; CMOS technology; Capacitance; Cutoff frequency; Electric breakdown; Electrical resistance measurement; Noise figure; Predictive models; Radio frequency; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
