Integrated RF and microwave components in BiCMOS technology

Author

Burghartz, Joachim N. ; Soyuer, Mehmet ; Jenkins, Keith A.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

43

Issue

9

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

1559

Lastpage

1570

Abstract

This paper presents and discusses an approach to exploit conventional BiCMOS technology for monolithic integration of RF & microwave systems. Several components, which are important elements of RF and microwave circuit design and which are not available in current BiCMOS, are described and characterized. The results for integrated spiral inductors in particular show that obvious limitations in comparison to compound semiconductor technology or hybrid configurations can be overcome to a large extent by utilizing the structural design options given with VLSI silicon integration technology

Keywords

BiCMOS integrated circuits; MOS capacitors; VLSI; inductors; integrated circuit design; power integrated circuits; varactors; BiCMOS technology; RF components; VLSI; circuit design; microwave components; spiral inductors; structural design options; BiCMOS integrated circuits; Circuit synthesis; Inductors; Integrated circuit technology; Microwave technology; Monolithic integrated circuits; Radio frequency; Silicon; Spirals; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.535350

Filename

535350