A Novel Charge-Imbalance Termination for Trench Superjunction VDMOS

Author

Qian, Qinsong ; Sun, Weifeng ; Zhu, Jing ; Liu, Siyang

Author_Institution

Nat. ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China

Volume

31

Issue

12

fYear

2010

Firstpage

1434

Lastpage

1436

Abstract

A novel charge-imbalance termination region for high-voltage trench superjunction (SJ) vertical diffused MOSFETs (SJ-VDMOSs) is proposed and discussed in this letter. Its breakdown characteristics are investigated theoretically and experimentally. A simple and meaningful analytical-solution method is proposed, and it agrees with the simulation and experimental results. As a result, the novel imbalance termination can suppress the edge-drift potential more effectively than the conventional one in the off state. When the trench SJ-VDMOS was compared with a conventional termination structure of the same size, the device improved the breakdown voltage (BV) by about 8% using the proposed termination structure. Experimentally, a BV of 715 V was obtained in the trench SJ-VDMOS with a 35-μm trench on a 45-μm epitaxial layer and a 90- μm termination region.

Keywords

MOSFET; semiconductor device breakdown; SJ-VDMOS; breakdown characteristics; breakdown voltage; charge-imbalance termination; edge-drift potential; high-voltage trench superjunction vertical diffused MOSFET; voltage 715 V; Analytical models; Doping; Electric breakdown; Electric potential; MOSFETs; Neodymium; Silicon; Breakdown voltage (BV); imbalance; superjunction (SJ); termination region;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2076406

Filename

5606188