Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium–Gallium–Zinc–Oxide Charge-Trapping Layer

Author

Chen, Lun-Chun ; Wu, Yung-Chun ; Lin, Tien-Chun ; Huang, Jyun-Yang ; Hung, Min-Feng ; Chen, Jiang-Hung ; Chang, Chun-Yen

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

31

Issue

12

fYear

2010

Firstpage

1407

Lastpage

1409

Abstract

This letter introduces a polycrystalline silicon (poly-Si) thin-film nonvolatile memory (NVM) with a nanocrystal (NC) indium-gallium-zinc-oxide (IGZO) charge-trapping layer. Experimental results indicate that this NVM exhibits high and symmetric program/erase speeds through the Fowler-Nordheim tunneling mechanism. The memory window loss of the NVM with NC IGZO charge-trapping layer is 25% after 10⁴ s at 85°C due to deep quantum well, as well as high-density and deep trap sites in NC IGZO charge-trapping layer. Accordingly, a poly-Si thin-film transistor with NC IGZO charge-trapping layer is promising for NVM applications.

Keywords

elemental semiconductors; gallium; indium; nanowires; random-access storage; semiconductor quantum wells; silicon; thin film transistors; zinc; Fowler-Nordheim tunneling mechanism; InGaZnO; Si; memory window loss; nanocrystal charge-trapping layer; nanowire nonvolatile memory; polycrystalline silicon thin-film nonvolatile memory; quantum well; temperature 85 C; thin-film transistor; Dielectrics; Flash memory; Logic gates; Nonvolatile memory; Thin film transistors; Tunneling; Indium gallium zinc oxide (IGZO); nanocrystal (NC); nonvolatile memory (NVM); thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2076271

Filename

5606189