On the Experimental Determination of Channel Backscattering Characteristics—Limitation and Application for the Process Monitoring Purpose

This paper reports a generalized temperature-dependent channel backscattering extraction method that can self-consistently determine the temperature sensitivity of the low-field mobility and the critical length in nanoscale MOSFETs. Through comparing the gate voltage and temperature dependence, we have shown that assuming constant temperature sensitivity of the low-field mobility and the critical length will result in unphysical backscattering characteristics. We have also investigated the limitation in this self-consistent method and proposed guidelines for experimental extraction. Our results show that channel backscattering is increased for NMOSFETs with higher body doping and HfO₂ dielectric and can be reduced for PMOSFETs when the process-induced uniaxial compressive strain technology is employed. This paper indicates that the self-consistent temperature-dependent method is competent to be routinely used in technology development for the process monitoring purpose.