DocumentCode
1356822
Title
Transistor wars
Author
Ahmed, Khaled ; Schuegraf, Klaus
Volume
48
Issue
11
fYear
2011
fDate
11/1/2011 12:00:00 AM
Firstpage
50
Lastpage
66
Abstract
Intel announced the most dramatic change to the architecture of the transistor since the device was invented. The company will henceforth build its transistors in three dimensions, a shift that-if all goes well-should add at least a half dozen years to the life of Moore´s Law, the biennial doubling in transistor density that has driven the chip industry for decades. But Intel´s big announcement was notable for another reason: It signaled the start of a growing schism among chipmakers. Despite all the great advantages of going 3-D, a simpler alternative design is also nearing production. Although it´s not yet clear which device architecture will win out, what is certain is that the complementary metal-oxide semiconductor (CMOS) field-effect transistor (FET)-the centerpiece of computer processors since the 1980s-will get an entirely new look. And the change is more than cosmetic; these designs will help open up a new world of low-power mobile electronics with fantastic capabilities.
Keywords
CMOS integrated circuits; MOSFET; low-power electronics; three-dimensional integrated circuits; 3D transistor; CMOS; FINFET; Intel; Moore´s Law; alternative design; complementary metal-oxide semiconductor field-effect transistor; computer processor; low-power mobile electronics; transistor architecture; CMOS technology; Computer architecture; FETs; Silicon on insulator technology; Three dimensional displays; Transistors;
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/MSPEC.2011.6056626
Filename
6056626
Link To Document