Title :
Short-Cavity Long-Wavelength VCSELs With Modulation Bandwidths in Excess of 15 GHz
Author :
Müller, M. ; Hofmann, W. ; Böhm, G. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Japan
Abstract :
InP-based buried tunnel junction vertical-cavity surface-emitting lasers (VCSELs) incorporating a novel short-cavity (SC) design are presented. These highly single-mode devices emitting at 1.55 mum show record-high modulation bandwidths in excess of 15 GHz together with greatly enhanced intrinsic resonance frequencies. For elevated temperatures of 65degC and 80degC, 3-dB-modulation bandwidths beyond 13 and 10 GHz are demonstrated, respectively. Reasons for the improved modulation behavior are the smaller intrinsic damping due to reduced photon-lifetime, and the better heat-management of these SC-VCSELs.
Keywords :
III-V semiconductors; indium compounds; laser beams; laser cavity resonators; laser modes; optical design techniques; optical modulation; surface emitting lasers; InP; buried tunnel junction vertical-cavity surface-emitting laser; enhanced intrinsic resonance frequency; intrinsic damping; modulation bandwidth; reduced photon-lifetime; short-cavity design; short-cavity long-wavelength VCSEL; single-mode device; temperature 65 degC; temperature 80 degC; wavelength 1.55 mum; InP; optical communications; semiconductor lasers; vertical-cavity surface-emitting laser (VCSEL);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2030781
