A novel cladding structure for semiconductor quantum-well lasers with small beam divergence and low threshold current

Author

Yen, Shun-Tung ; Lee, Chien-Ping

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

32

Issue

9

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

1588

Lastpage

1595

Abstract

A novel cladding structure is proposed and analyzed for semiconductor quantum-well lasers to achieve a small vertical-beam divergence and a low threshold current density simultaneously. This cladding structure is designed to guide a wide optical mode but with a high peak intensity in quantum wells. The wide expansion of the optical mode results in a small beam divergence. In addition, the high optical Intensity in quantum wells causes a low threshold current density. This novel cladding structure is optimized. The result shows that this type of cladding structures can achieve a beam divergence as small as 14.6° while the threshold current density remains small

Keywords

claddings; current density; laser beams; laser modes; optical design techniques; quantum well lasers; beam divergence; cladding structure; high optical Intensity; high peak intensity; low threshold current; low threshold current density; semiconductor quantum-well lasers; small beam divergence; small vertical-beam divergence; threshold current density; wide optical mode; Fiber lasers; Laser beams; Laser modes; Optical refraction; Optical sensors; Optical variables control; Pump lasers; Quantum well lasers; Semiconductor lasers; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.535363

Filename

535363