Title :
High efficiency, good linearity, and excellent phase linearity of 3.1-4.8 GHz CMOS UWB PA with a current-reused technique
Author :
Murad, S.A.Z. ; Pokharel, R.K. ; Sapawi, R. ; Kanaya, H. ; Yoshida, K.
Author_Institution :
Dept. of Electron., Kyushu Univ., Fukuoka, Japan
Abstract :
This paper describes the design of 3.1 to 4.8 GHz CMOS power amplifier (PA) for ultra-wideband (UWB) applications using 0.18-μm CMOS technology. The UWB PA proposed here employs cascode topology with a current-reused technique to enhance the gain at the upper end of the desired band, an inter-stage inductor, and a resistive feedback at the second stage to obtain the flatness gain. The measurement results indicated that the input return loss (S11) was less than -5 dB, output return loss (S22) was less than -8 dB, and average power gain of 10.3 dB with a flatness about 0.8 dB. The input 1 dB compression point about -2 dBm and excellent phase linearity (group delay) of ±135 ps across the whole band were obtained. Moreover, a very high power added efficiency (PAE) of 40.5% at 4 GHz with 50 Ω load impedance was achieved with a power consumption of 24-mW.
Keywords :
CMOS analogue integrated circuits; delays; field effect MMIC; microwave power amplifiers; power consumption; ultra wideband communication; CMOS UWB PA; CMOS power amplifier; cascode topology; current-reused technique; frequency 3.1 GHz to 4.8 GHz; group delay; inter-stage inductor; phase linearity; power 24 mW; power consumption; resistance 50 ohm; resistive feedback; size 0.18 mum; ultra wideband applications; CMOS integrated circuits; CMOS technology; Gain; Impedance; Linearity; Power amplifiers; Topology; Power amplifier, Ultra wideband, Currentreused, Power added efficiency;
Journal_Title :
Consumer Electronics, IEEE Transactions on
DOI :
10.1109/TCE.2010.5606253