Title :
Investigation of high-efficiency surface-emitting lasers with blazed grating outcouplers
Author :
Hagberg, Mats ; Eriksson, Niklas ; Larsson, Anders
Author_Institution :
Dept. of Optoelectron. & Electr. Meas., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
9/1/1996 12:00:00 AM
Abstract :
Grating outcouplers for use in grating coupled surface emitting semiconductor lasers were investigated. For this purpose, horizontal cavity InGaAs-AlGaAs laser oscillators, each integrated with one detuned grating outcoupler, were fabricated using electron beam lithography and chemically assisted ion beam etching. Outcouplers with gratings of both rectangular and blazed profile as well as of different toothwidth-to-period ratios were fabricated and evaluated. Superior differential quantum and surface emission efficiencies of 56% and 84%, respectively, were measured for lasers with optimized blazed outcouplers. This shows that efficiencies comparable to those of conventional edge emitting lasers can be achieved. The measured surface emission efficiencies were also compared with predictions from a theoretical grating analysis
Keywords :
III-V semiconductors; diffraction gratings; electron beam lithography; gallium arsenide; indium compounds; ion beam applications; laser cavity resonators; optical couplers; optical fabrication; quantum well lasers; surface emitting lasers; 56 percent; 84 percent; InGaAs strained quantum well laser; InGaAs-AlGaAs; InGaAs-AlGaAs laser oscillators; blazed grating outcouplers; chemically assisted ion beam etching; detuned grating outcoupler; differential quantum efficiencies; edge emitting lasers; electron beam lithography; grating coupled surface emitting semiconductor lasers; high-efficiency surface-emitting lasers; horizontal cavity; laser fabrication; optimized blazed outcouplers; surface emission efficiencies; theoretical grating analysis; toothwidth-to-period ratios; Chemical lasers; Electron beams; Gratings; Laser theory; Lithography; Optical coupling; Oscillators; Quantum well lasers; Semiconductor lasers; Surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of