An overview of smart power technology

Author

Baliga, Jayant B.

Author_Institution

Dept. of Electr, & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

38

Issue

7

fYear

1991

fDate

7/1/1991 12:00:00 AM

Firstpage

1568

Lastpage

1575

Abstract

The evolution of smart power technology and the impact of this technology on electronic systems are reviewed. After providing a definition of smart power technology, the author describes the key technological developments in power semiconductor devices, namely power MOSFETs and IGBTs (insulated-gate bipolar transistors). These developments are the foundation upon which smart power technology rests. Smart power technology requires the marriage of power device technology with CMOS logic and bipolar analog circuits. The technical challenges involved in combining power handling capability with on-chip regulation of overcurrent, overvoltage, and overtemperature conditions are described, together with examples of solutions for telecommunications, motor control, and switch mode power supplies

Keywords

BIMOS integrated circuits; insulated gate bipolar transistors; insulated gate field effect transistors; power electronics; power integrated circuits; power transistors; protection; reviews; CMOS logic; IGBTs; bipolar analog circuits; insulated-gate bipolar transistors; onchip regulation; overcurrent; overtemperature conditions; overvoltage; power MOSFETs; power semiconductor devices; smart power technology; Analog circuits; CMOS analog integrated circuits; CMOS logic circuits; CMOS technology; Insulated gate bipolar transistors; Insulation; Logic devices; MOSFETs; Power semiconductor devices; Switches;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.85151

Filename

85151