Title :
A versatile 700-1200-V IC process for analog and switching applications
Author :
Ludikhuize, Adriaan W.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
fDate :
7/1/1991 12:00:00 AM
Abstract :
An IC process with a wide range of devices up to 1200 V is described. In addition to low-voltage bipolars and CMOS and 230-V VDMOS it provides 700-V high-side LDMOS, HV-PMOS (EPMOS) and low-voltage circuitry, low-side 1200-V LDMOS and 700-V LIGBT (lateral insulated-gate bipolar transistor), as well as 700-V interconnection. These features have been realized by using a substrate of higher resistance in a 250-300-V IC process and by adaptation in the Resurf structure for lateral DMOS. Application examples for flyback and half-bridge power conversion and as a power-bridge driver are given
Keywords :
BIMOS integrated circuits; driver circuits; integrated circuit technology; power convertors; power integrated circuits; semiconductor switches; 230 to 1200 V; CMOS; EPMOS; HV-PMOS; IC process; LIGBT; Resurf structure; VDMOS; half-bridge power conversion; high-side LDMOS; lateral DMOS; lateral insulated-gate bipolar transistor; low-voltage bipolars; low-voltage circuitry; power-bridge driver; switching applications; Analog integrated circuits; Application specific integrated circuits; Boron; Conductivity; Epitaxial layers; P-n junctions; Power conversion; Protection; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
